The structure of the piezoresistive sensor and the product recommendationThe structure of the piezoresistive sensor

This sensor adopts an integrated process to integrate the resistance bar on the monocrystalline silicon diaphragm to make a silicon piezoresistive chip, and the periphery of the chip is fixed and packaged in the shell, and the electrode leads are drawn out. Piezoresistive pressure sensors are also called solid-state pressure sensors. They are different from sticky strain gauges that need to sense external force indirectly through elastic sensitive elements, but directly sense the pressure to be measured through a silicon diaphragm.

This sensor adopts an integrated process to integrate the resistance bar on the monocrystalline silicon diaphragm to make a silicon piezoresistive chip, and the periphery of the chip is fixed and packaged in the shell, and the electrode leads are drawn out. Piezoresistive pressure sensors are also called solid-state pressure sensors. They are different from sticky strain gauges that need to sense external force indirectly through elastic sensitive elements, but directly sense the pressure to be measured through a silicon diaphragm.

One side of the silicon diaphragm is a high-pressure chamber connected with the pressure to be measured, and the other side is a low-pressure chamber connected with the atmosphere. The silicon diaphragm is generally designed as a circular shape with a fixed periphery, and the ratio of the diameter to the thickness is about 20-60. Locally diffuse 4 P impurity resistance strips in the circular silicon diaphragm and connect them to form a full bridge. Two of them are located in the compressive stress area and the other two are located in the tensile stress area, which are symmetrical with respect to the center of the diaphragm.

In addition, there are also square silicon diaphragms and silicon cylindrical sensitive components. The silicon cylindrical sensitive element is also diffused in a certain direction of a certain crystal plane of the silicon cylindrical surface to make resistance strips. Two tensile stress resistance strips and the other two compressive stress resistance strips form a full bridge. ? Piezoresistive sensor is based on the piezoresistive effect of the semiconductor material on the semiconductor material substrate through the diffusion resistance and made of devices.

The substrate can be directly used as a measuring sensor element, and the diffusion resistance is connected in the form of a bridge in the substrate.

When the substrate is deformed by an external force, each resistance value will change, and the bridge will produce a corresponding unbalanced output. The substrate (or diaphragm) materials used for piezoresistive sensors are mainly silicon wafers and germanium wafers. Silicon piezoresistive sensors made of silicon wafers as sensitive materials have attracted more and more attention, especially The application of solid-state piezoresistive sensors for measuring pressure and velocity is the most common. ?

Product recommendations for piezoresistive pressure sensors:

The structure of the piezoresistive sensor and the product recommendationThe structure of the piezoresistive sensor

US MEAS silicon piezoresistive pressure sensor – 27AND37

American MEAS silicon piezoresistive pressure sensor 27AND37, which uses Measurement Specialties’ proprietary UltraStable? die to provide excellent performance and long-term stability in a wide temperature range. A gauge and differential pressure range from 0-15 to 0-250 psi are available.

The structure of the piezoresistive sensor and the product recommendationThe structure of the piezoresistive sensor

American MEAS silicon piezoresistive pressure sensor-MS4425

The MS4425 is a temperature-compensated, silicon piezoresistive pressure sensor in a dual-in-line package. It is mainly used for cost-sensitive applications that require excellent performance and long-term stability.

The structure of the piezoresistive sensor and the product recommendationThe structure of the piezoresistive sensor

American MEAS silicon piezoresistive pressure sensor-MS4426

The American MEAS silicon piezoresistive pressure sensor MS4426 is a temperature-compensated, piezoresistive silicon pressure sensor in a dual-in-line package. It is mainly used for cost-sensitive applications that require excellent performance and long-term stability.

The structure of the piezoresistive sensor and the product recommendationThe structure of the piezoresistive sensor

Silicon piezoresistive pressure sensor-MS5534C

MS5534C silicon piezoresistive pressure sensor uses advanced ADC analog-to-digital conversion IC to provide 16-bit pressure and temperature digital output. The sensor also provides 6 readable coefficients for high-precision software calibration. The main features of MS5534C are low voltage, low power consumption, and automatic standby (ON/OFF) function.

The structure of the piezoresistive sensor and the product recommendationThe structure of the piezoresistive sensor

Silicon Piezoresistive Pressure Sensor-1200 Series

The 1200 series is a temperature-compensated silicon piezoresistive pressure sensor with a dual in-line package structure. A wide range of temperature compensation is achieved through laser correction resistors, and the gain of the differential amplifier is adjusted to correct the pressure sensitivity change of the sensor.

The Links:   HSD150MX15-B00 EG7500B-NS

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